| 摘要 |
PURPOSE:To make it possible to form a semiconductor laser electrode and an electronic element electrode on the same plane by forming a groove by etching a part of a semi-insulating substrate and forming a TJS semiconductor laser in said groove, in which both n-side and p-side electrodes are present on the upper surface. CONSTITUTION:A part of a semi-insulating substrate 14 is etched to form a groove, in which an undoped AlGaAs layer 15, an n-type AlGaAs layer 16 is a lower cladding layer, an n-type GaAs layer 17 as an active layer, an n-type AlGaAS layer 18 as an upper cladding layer, and an n-type GaAs layer 19 as a cap layer are laminated. After that, a Zn diffusion region p<+> type layer 20 and a Zn stripe region p<-> type layer 21 are formed. Furthermore, as an FET part, a high-resistance AlGaAs layer 22 and an n-type GaAs layer 23 as an active layer are laminated in a manner a surface of the active layer 23 is in accordance with a surface of the cap layer 19. Consequently, it becomes possible to place the surface of a semiconductor laser part and that of an FET part on the same level and on that plane, a p-side electrode 24 and an n-side electrode 25 of the laser and a drain electrode 26, a gate electrode 27 and a source electrode 28 of the FET are formed.
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