| 摘要 |
PURPOSE:To obtain a large current without increasing the occupied area of an output stage by providing a logic gate comprising a MOSFET, a load resistor and other power supply to the pre-stage of an output MOSFET of the same polarity of a complementary MOSFET integrated circuit. CONSTITUTION:When an L level is given to a point 1 as a logic circuit output comprising the complementary MOSFET, a P-MOSFET 2 is conductive, a potential being the proportional share of the 1st power supply 4 and the 3rd power supply fed to a power supply terminal 6 by the MOSFET 2 and a load resistor 3 is fed to a gate of a P-MOSFET 7. In selecting the conductive resistance of the MOSFET 2 sufficiently smaller than the load resistor, the MOSFET 7 is made nonconductive. When the point 1 is at an H level, the MOSFET 2 is nonconductive and the MOSFET is conductive, and a current flows from the power supply 4 to an output terminal 8, and the said current is increased by lowering the voltage of the 3rd power supply more than the 2nd power supply of the complementary MOS circuit connected to the point 1.
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