发明名称 Method for making horizontally layered momom tunnel device
摘要 MOMOM structural geometry and fabrication techniques are disclosed. A first oxidizable metal strip (3) and a second coplanar nonoxidizable metal strip (6) are deposited on an insulating substrate (2). An insulating layer (12) is deposited on the metal strips, followed by deposition of a third nonoxidizable metal layer. A generally vertical notch (14) is cut through the layers to the substrate providing left and right sections (15, 16) of the third metal layer, left and right sections (19, 20) of the insulating layer, and the first and second metal layers with facing edges (23, 24) spaced by the notch therebetween. An oxidized tip (25) is formed at the facing edge of the first metal layer. A fourth metal layer (26) is ballistically deposited over the oxidized tip and the left section of the third metal layer, using the notch edge of the right section of the third metal layer as a shadow mask, followed by oxidization of the fourth metal layer. A fifth horizontal metal layer (30) is ballistically deposited by a vertically columnated beam along the substrate across the bottom (28) of the notch between the oxidation layer on the fourth metal layer and the facing edge (24) of the second metal layer. The M-O-M-O-M structure is provided by the first metal layer (3)-the oxidized tip (25)-the fourth metal layer (26) at a generally vertical portion (39)-the oxidation layer (29) on the fourth metal layer at a generally vertical portion (41)-the fifth metal layer (30) and the second metal layer (6).
申请公布号 US4675979(A) 申请公布日期 1987.06.30
申请号 US19860863311 申请日期 1986.05.15
申请人 EATON CORPORATION 发明人 LADE, ROBERT W.;BENJAMIN, JAMES A.;SCHUTTEN, HERMAN P.
分类号 H01L45/00;(IPC1-7):H01L21/473;H01L21/475;H01L49/02 主分类号 H01L45/00
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