| 摘要 |
PURPOSE:To form a film in a thoroughly combined state by covering an opening connecting a plasma chamber and deposition chamber and wafer surface with the shutters, thereby stabilizing a plasma state and gas supply. CONSTITUTION:The opening connecting the plasma chamber 4 and the deposition chamber 5 is closed by the shutter 3 and while the wafer 2 surface is held closed by the 2nd shutter 11, the inside of the deposition chamber 3 is evacuated to a vacuum. Microwaves are supplied to the plasma chamber 4 and DC current is passed thereto to form a magnetic field. Gaseous O2 or N2 is fed from a gas supplying pipe 6 to the plasma chamber 4 to form plasma and at the same time, gaseous silane such as SiH4 is supplied thereto from a supplying part 10. The 1st and 2nd shutters 3, 11 are opened when the plasma state and the supply rate of the gaseous silane are stabilized. The silicon oxide film (silicon nitride film) in the thoroughly combined state is formed on the wafer by the CVD method according to the above-mentioned mechanism.
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