| 摘要 |
PURPOSE:To easily layout the surface of a semiconductor by arranging a writing circuit and a reading circuit on both sides of a storage cell array and writing data in one stage cell simultaneously with the reading of data from another storage cell. CONSTITUTION:When an active signal is applied from a line decoder to a line X2 in a simultaneous operation mode for reading out data from a storage cell C21 and writing data in a storage cell C22, the cells C21, C22 connected to the line X2 are activated, and when a selecting signal is applied from a row decoder to row decoder selecting lines 24, 29, MOS transistors MOST25, 26, 33, 34 are turned on. At that time, the selecting signal is applied to a reading mode line 37 and a writing mode line 38 and all the MOSTs 39-42 are turned on. Thereby, the data in the cell C21 are discriminated by the circuit 21 and outputted and new data are applied from the circuit 22 to the cell C22.
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