| 摘要 |
<p>PURPOSE:To control the drain current of a PROM cell and to prevent the reliability or chip size of the titled circuit from influence due to heat generation by switching load resistors in accordance with normal writing or multi-byte writing. CONSTITUTION:A load transistor (TR) B having small resistance or a load TR A having large registance is switched in accordance with the normal writing or the multi-byte writing. Accordingly, even at the time of multi-byte writing, the drain current of a TR forming a PROM cell D is controlled so as not to be increased. Consequently, the reliability can be prevented from bad influence due to heat generation and the increase of chip size can be suppressed without increasing the width of wiring.</p> |
