| 摘要 |
PURPOSE:To permit the comparative study among different systems by disposing a vapor deposition treatment part in the upper part in a vacuum vessel and plural ion generators for vapor deposition of different systems in the lower part. CONSTITUTION:This ion plating device is formed of the vapor deposition treatment part provided in the upper part in the vacuum vessel 1 and the plural ion generators for vapor deposition of the different systems disposed in the lower part of the treatment part. The RF system ion generator A for vapor deposition and the HCD system ion generators B for vapor deposition are simultaneously operated or are discretely operated as said generators.
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