发明名称 |
Solid state image sensor |
摘要 |
In a solid state image sensor including a plurality of light receiving elements in a matrix manner, each light receiving element is composed of a static induction transistor having a MOS gate construction formed on a surface of a semiconductor substrate and having a potential barrier formed in a vertical direction perpendicular to the semiconductor substrate surface. Therefore, a self-alignment process can be preferably applied to a formation of the solid state image sensor, so that the light receiving elements can be integrated in an easy and simple manner.
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申请公布号 |
US4677453(A) |
申请公布日期 |
1987.06.30 |
申请号 |
US19850709804 |
申请日期 |
1985.03.08 |
申请人 |
OLYMPUS OPTICAL CO., LTD. |
发明人 |
MATSUMOTO, KAZUYA;NAKAMURA, TSUTOMU |
分类号 |
H01L27/14;H01L27/146;H01L29/772;H01L31/113;(IPC1-7):H01L27/14;H01L31/00 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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