| 摘要 |
PURPOSE:To increase the factor of multiplication and to reduce noises by a method wherein a laminated film composed of hetero materials is provided on a base layer, and electrodes are formed in p and n type regions provided at each end of this film, respectively. CONSTITUTION:A laminated film 12 is provided on the base layer 11 of a semi- insulating Inp layer. The film 12 is formed by alternate lamination of extremely thin films of hetero materials. One end of this film 12 is made as the n type region 13, and the other the p type region 14. Each region 13 and 14 become an n type multilayer GaAs/Inp region and a p type multilayer GaAs/Inp region, and electrodes 15 and 16 are formed on the regions 13 and 14. When a bias voltage is impressed on the electrodes 15 and 16 in the state that electrons are separated from holes, the recoupling of the electrons with the holes can be avoided, accordingly a large factor of multiplication can be avoided, and photo detection can be carried out with low noises. |
