| 摘要 |
PURPOSE:To improve the resolution and to eliminate the disconnecting or wirings even if an insulating layer above a storage capacitor is covered with the wirings by disposing the upper end of a conductor for forming one electrode of the capacitor inside from the surface of a semiconductor substrate. CONSTITUTION:A groove 23 which arrives at a high impurity density silicon 22 is formed on a substrate 20, a capacity insulating layer 24 is grown on a wall except the vicinity of the opening of the groove 23, and a polysilicon conductor 25 to which an N-type impurity such as phosphorus is implanted is filled in the remaining space. The upper end of the conductor 25 is oxidized to be formed with a protecting film 26 and connected with a silicon dioxide layer 27 for separating between memory cells. An N-type impurity such as phosphorus is implanted to the side wall of the groove 23 above the film 25 to form an impurity region 28, which is connected with one source/drain region 30 of an access transistor 29 formed on the surface of a substrate 21. As a result, the conductor 25 is connected through the region 28 with the region 30. |
