| 摘要 |
PURPOSE:To improve crystallinity of a semiconductor single crystal layer formed on an insulating film by a method wherein the energy quantity given to a semiconductor thin film to be annealed is varied between a region where high thermal conductivity material such as polycrystalline silicon exists in its fundation layer and the other regions. CONSTITUTION:Dosage of an electron beam applied to silicon is limited in the region where a tungsten film 18 is formed and an energy injected into that region is small. On the other hand, temperature is apt to go low in the region where a wiring layer 13 is formed in its foundation layer because the thermal conductivity of silicon is higher than that of SiO2. Therefore, the temperature of the region of a polycrystalline silicon film 16 above the wiring layer 13 is made to be nearly equal to the temperature of surrounding regions because scattering of the heat is large even if the injected energy is large. Therefore, by predetermining the thickness of a cap layer 18 most properly to control the energy quantity suppressed by the cap layer 18 properly, the polycrystalline silicon film 16 can be annealed under the uniform temperature.
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