| 摘要 |
PURPOSE:To provide a thin film semiconductor device which employs an inexpensive low distortion temperature glass substrate, has a large carrier mobility and good response by forming a thin polysilicon film of special crystallinity value on the glass substrate of specific distortion temperature or lower, and forming source, drain and channel regions on the thin film. CONSTITUTION:After chromium Cr for a gate electrode is deposited on a glass substrate 1, intrinsic semiconductor layers for a gate insulating film and an SiO2 channel region, and N<+> type layers 2-4 for source, drain regions are continuously deposited at 400 deg.C by a plasma CVD method. Thereafter, they are heat treated at 580 deg.C for 2hr in nitrogen. At this time, the crystallinity of the semiconductor layer is 90%. According to this example, 60cm<2>/V.sec of carrier field effect mobility can be obtained. |
