| 摘要 |
PURPOSE:To enhance a response to a light by reducing the absolute value of a voltage applied to a gate electrode smaller in inverse proportion as the illumination of an incident light is made larger. CONSTITUTION:A conductive layer is patterned on an insulator substrate 1 to form a gate electrode 5, and an insulating layer 6 of SiOx, SiNx is formed by a sputtering method or a glow discharge method. CdS.Se as a photoconductive layer, a semiconductor layer 2 of an a-Si:H, doped semiconductor layers 3, 3', and electrodes 4, 4' (drain and source electrodes 4, 4') are formed on the layer 6. A DC power source 7 is connected between the electrodes 4 and 4', and a variable DC power source 8 is connected between the electrode 4' and the electrode 5.
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