| 摘要 |
PURPOSE:To readily manufacture a 2-layer wiring semiconductor device of fine wiring structure by preparing to insulating film materials having different etching velocities, and disposing the material having slower speed as a lower layer to form an 2-layer interlayer insulating film. CONSTITUTION:An insulating silicon oxide film 2 and lower layer aluminum wiring conductors 3, 4 are respectively patterned on a semiconductor substrate 1, and a polyimide resin film 5 is so formed as to bury them. Then, the surface of the resin 4 is etched to be flattened to the height of the conductors 3, 4. An upper layer interlayer insulating film 7 is formed with silicon dioxide (SiO2) as an insulating film material on a lower layer interlayer insulating film 6, and a through hole 8 is opened by displacing the center from the selected conductor 3. The through hole is opened by an etchant such as carbon tetrafluoride CH4 which has an etching velocity largely acting for the upper layer silicon dioxide insulating film material and slowly acting for the lower polyimide insulating film material.
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