| 摘要 |
PURPOSE:To prevent a charge from being accumulated on the surface of a standard sample, and to execute the qualitative and quantitative analyses of an insulating thin film component element with accuracy, by forming an insulating material thin film for the standard sample on a substrate having the good conductivity, such as a metal, etc., by a specified thin film forming method. CONSTITUTION:For instance, in a reaction chamber 1 whose pressure is adjusted to 10<-2>Torr, a carrier gas O2, and reaction gases SiH4, PH3 are led in through a carrier gas leading-in pipe 3, and a reaction gas leading-in pipe 4, respectively, by 600SCCM and 300SCCM flow rate, respectively, and under a condition that the temperature of a substrate is 420-450 deg.C, a phosphorus glass film is formed at 0.2mum/min growth speed and by 1mum film thickness. This standard sample for analyzing an insulating film can suppress a charge-up phenomenon, because a charge accumulated on an insulating material originally is made to escape by an electric conductive material being the substrate by projecting a charge corpuscular ray, and the drop of the measurement accuracy caused by charge-up can be suppressed to the minimum. |
