| 摘要 |
PURPOSE:To determine the electrostatic breakdown resistance of an MOS FET in a semiconductor device during manufacturing steps by providing a check pattern for measuring characteristics equivalent to forward and reverse characteristics of a gate protection diode sole unit. CONSTITUTION:n-Type diffused layer 22, 23 are formed by ion implanting on a p-type Si substrate 21, and p<+> type diffused layers 24, 25 are thereafter formed by diffusing boron. Then, n<+> type diffused layers 26 are formed by diffusing phosphorus, the layers 26 are respectively opened, and connected with aluminum electrodes 27 to obtain a check pattern having entirely the same sectional struc ture as a gate protection diode and formed in the same process. Thus, the electrostatic breakdown resistance of an MOS FET in a semiconductor device can be determined during manufacturing steps.
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