| 摘要 |
PURPOSE:To obtain the titled body having a very small dark decay of the electrostatic potential by providing an intermediate layer between the electroconductive substrate and the photoconductive layer composed of a non- crystalline silicon, and by incorporating a dry cured material of a solution contg. an org. stannic compd. to the intermediate layer. CONSTITUTION:The photoconductive layer is composed of an i-type semiconductor having the non-crystalline silicon contg. hydrogen atom, as a main component. and at least one kind of a carbon atom, a nitrogen atom or an oxygen atom. The intermediate layer is composed of the dry cured material of the solution contg. the org. stannic compd. As the used org. stannic compd, stannic bisacetylacetonate, etc is examplified. The dry curing temp. of said compd. is 100-400 deg.C. The thickness of the film of the surface layer is preferable to be <=1mum. |
