| 摘要 |
PURPOSE:To write memory transistors having different negative resistances and to obtain stable low power consumption by applying a predetermined current value to the drain electrode of an N-channel floating gate avalanche injection type MOS nonvolatile memory. CONSTITUTION:The drain electrode of a P-channel enhancement MOS transistor P1 having a source electrode as a power terminal 1, a gate electrode as a first control signal terminal 2 and the drain electrode as an output terminal 3 is connected with that of an N-channel enhancement MOS transistor Q2. The gate electrode is connected with the second control signal terminal 4, its source electrode is connected with the drain electrodes of N-channel floating gate avalanche injection type MOS nonvolatile memories M1-M3. The three gate electrodes are grounded to control signal terminals 5-7, the source electrode is grounded, the N-channel substrate electrode of the MOSP1 is connected with the power terminal, and P-channel substrate electrode Q2, M1-M2 are grounded. |
