| 摘要 |
PURPOSE:To reading diffuse gold to a separating portion and to selectively shorten a lifetime by one diffusion of the gold by forming a gap not provided with a high density layer on the side of an anode of a region corresponding to the separating portion. CONSTITUTION:A gap 10 not provided with high density layers N4<+>, P1<+> is formed on the side of an anode of a region corresponding to a separating portion 6 to resultantly dope gold in large quantity in the portion 6. Thus, a recombination is forced by the gold until carrier of N1 of a diode 3 goes out through the portion 6, and the carrier cannot pass from the portion 6 to a main GTO 1. Thus, the lifetime can be selectively shortened by merely diffusing the gold once from the gap 10 of the anode side, thereby effectively avoiding erroneous firing peculiar for a reverse conductivity type gate turn-off thyristor due to the leakage of the carrier. |
