发明名称 MODELLING METHOD FOR FIELD EFFECT TRANSISTOR
摘要 PURPOSE:To interpolate smoothly a characteristic from a weak inversion area to a strong inversion area through a transition area by interpolating characteristic data obtained by the observation or a device simulator in a prescribed manner. CONSTITUTION:The characteristic data 3 is obtained from the observation by an observation system 1 or the device simulator 2. A logarithmic rate of change of the data 3 is calculated in a logarithmic rate of change calculation processing 4. By making a bias voltage having a maximum inclination of the rare of change a boundary, a bias area is divided and a single Gauss type weight function is calculated in weight function calculation processing 5. The data 3 is interpolated by a segment tertiary polynomial in a linear space interpolation processing 6 and a linear space interpolation value 7 is calculated. After the logarithm of the data 3 is interpolated by the segment tertiary polynomial, an index is taken and a logarithmic space interpolation value 9 is calculated. The interpolation values 6, 7 are connected in a linear connection processing 10 by the use of the single Gauss type weight function obtained in 5 and the interpolation value of the characteristic data is obtained. Thereby, the characteristic from the weak inversion area to the strong inversion area through the transition area can be smoothly interpolated.
申请公布号 JPS62145472(A) 申请公布日期 1987.06.29
申请号 JP19850288749 申请日期 1985.12.20
申请人 NEC CORP 发明人 SAITO TOSHIYUKI
分类号 H01L29/78;G06F17/50;H01L21/336;H01L29/80 主分类号 H01L29/78
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