SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To produce a semiconductor memory device without normal resin coating for preventing an alpha-ray by composing to remove a software error. CONSTITUTION:A p<+> type region 7 of 10<14>-10<18>cm<-3> of impurity density is formed to contact with an n<+> type region 6 on a p<-> type semiconductor substrate 1 having 10<13>-10<16>cm<-3> of an impurity density. A p<+> type region 130 having 10<14>-10<18>cm<-3> of an impurity density is formed on the substrate 1 to contact with an n<+> type region 80 to become one source/drain regions, to connect with the region 7 and not to fall in a channel region under a second gate insulating film 5. Further, a p<+> type region 131 having 10<14>-10<18>cm<-3> of impurity density is formed on the substrate 1 to contact with an n<+> type region 81 connected with a bit line to become other source/drain region so as not to fall within the channel region under the film 5.