| 摘要 |
<p>PURPOSE:To achieve high-speed original pattern exchange and high accuracy alignment at the same time by a method wherein, once marks on a reticle and marks on a wafer are aligned by alignment sensors, exchange of a plurality of patterns is performed by shifting a reticle stage by open control employing an interferometer with the initially aligned position as a reference. CONSTITUTION:A reticle R is placed on the predetermined position of a reticle stage 7 and aligned by detecting marks RM1, RM2, RM3 and RM4 by using alignment sensors 21a and 21b and so forth. Coordinates of the reticle stage 7 at that time are read by an interferometer 11 and stared in a main controller 18 as the reference position of the reticle R. Then a wafer W is placed on a wafer stage 13 and wafer marks are detected and global alignment of the wafer W is executed. With this global alignment, the positioning relation between the specific point on the wafer W and the light axis AX of a projection lens 12 is defined and, based only upon the measured value by an interferometer 16, the region on the wafer to be exposed and a projected pattern image by the projection lens 12 can be aligned with the detectable resolution of the interferometer 16.</p> |
