| 摘要 |
PURPOSE:To provide a semiconductor device which can be microminiaturized in a gate width by removing a mask material by a PEP method only at a portion to become a gate, etching and forming a gate in the opened portion. CONSTITUTION:After a first aluminosilicate glass ASG film 23 is formed, an opened portion 23a is formed by etching by a PEP method at the film 23 corresponding to a portion to be formed with a gate. Then, after a phosphorus-doped polycrystalline silicon layer is deposited on the entire surface, it remains only on the upper portion of a gate insulating film 25 by a PEP method as a gate electrode 26. After the portion 23a is formed at the film 23, the film 23 is formed on the entire surface and the film 23 remains only on the inner wall of the hole 23a by etching by RIE. Accordingly, a gate width L2 can be reduced as compared with the conventional one to provide a fine gate.
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