发明名称 CONTROLLER FOR ION IMPLANTATION EQUIPMENT
摘要 PURPOSE:To pull out an enough beam current under each of various implanting conditions and efficiently perform the automatic augmentation of an ion beam to a normal level in a short time at the start of implantation, by making an operating person set augmenting conditions at optimal numerical values and register the conditions under each of the various implanting conditions while monitoring the state of automatic augmentation at the start of implantation. CONSTITUTION:An operating person enters set values (which include implanting conditions) for start-time automatic augmentation parameters corresponding to items, through a setting unit 24, while watching a table pattern P1 shown on an image display unit 23. The set values are shown in the set value display area of the table pattern P1 so that the set values shown in the area are registered in a memory 32 by a man-machine control unit 21. The entry of the set values for the start-time automatic augmentation parameters is performed by the operating person under each implanting condition. Start-time augmenting conditions represented by a plurality of start-time automatic augmenting parameters are individually registered in the memory 32 by the man-machine control unit 21 under each implanting condition.
申请公布号 JPS62145637(A) 申请公布日期 1987.06.29
申请号 JP19850286771 申请日期 1985.12.19
申请人 NISSIN ELECTRIC CO LTD 发明人 NISHIMURA SOJI;SATO SHIGEO;TANIGAWA YOSHIHIKO
分类号 H01L21/265;C23C14/48;C23C14/54;H01J37/317 主分类号 H01L21/265
代理机构 代理人
主权项
地址