| 摘要 |
PURPOSE:To improve the noise index of a compound semiconductor device by ion implanting deeper in depth and thicker in impurity concentration in second diffused region than in a first diffused region to punch the second region through the first region. CONSTITUTION:A second diffused region 4 punches through a first diffused region 3 by ion implanting deeper in depth and thicker in impurity concentration in the second region 4 than in the first region 3. This, since a capacity is generated only by a vertical junction 5, a capacity value can be very much reduced to largely improve a noise index NF. Since a series resistance generated between a source electrode 3 and a gate 1 electrode can be reduced, a current at breakdown time can be abruptly fed.
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