| 摘要 |
PURPOSE:To obtain an insulating film whose internal stress is compressive and small and stable by employing SiH4, N2O and N2 as introduced gases in a plasma CVD method. CONSTITUTION:When the flow of N2 gas is 0sccm, the stress of a formed film is a compressive stress of 3X10<9>dyne/cm<2>, but by adding the N2 gas, the film stress is reduced to the order of 10<8>. If the film is formed under the condition that flows of SiH4, N2O and N2 are 18sccm, 3sccm and 150sccm respectively, the film stress is reduced to 8X10<7>dyne/cm<2>, which is two-digit smaller than the stress of a conventional film. The change of the film stress immediately after the film formation, after being exposed to the atmosphere for one week, after being damped in the atmosphere of 80% relative humidity for 20hr and further, after being annealed in the air at 300 deg.C for one hour is measured. The film stress is within the range as small as 8X10<7>-2X10<8>dyne/cm<2> so that a film which shows small and stable aging change of the film stress can be obtained.
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