| 摘要 |
<p>PURPOSE:To improve the throughput (processing efficiency) of a photoelectric image transferring apparatus by heat cleaning a semiconductor substrate surface when covering with a substance film for assisting photoelectron emitting amount, and then cooling the substrate in inert gas or neutral gas. CONSTITUTION:A GaAs substrate 1 is contained in a subchamber 3, an infrared light is emitted from a heating light source 31 to the substrate to heat the substrate to 650-680 deg.C, thereby evaporating to scatter moisture, GaAs oxide film and contaminated Cs film on the surface. Since the substrate 1 is heated to 650-680 deg.C, helium gas is gradually fed to the subchamber 3 to cool it by the convection of the gas. When it is heated to approx. 200-300 deg.C, the gas is blown to the substrate by regulating the position of a gas input tube 32 to rapidly cool it. When it is cooled to approx. 100 deg.C evacuating is started to high vacuum. The vacuum degree of the subchamber 3 is controlled to several Torr even during these operations so that the gas pressure may not considerably rise.</p> |
