| 摘要 |
PURPOSE:To very much reduce a capacity value by ion implanting a second diffused region thinner in impurity concentration and shallower in depth than a first diffused region. CONSTITUTION:A second diffused region 4 is formed by ion implanting thinner in impurity concentration and shallower in depth than a first diffused region 3. Since the region 4 to be superposed with the region 3 is lower in impurity concentration, a superposed portion 5 has substantially the same in impurity concentration and in conductivity type as those in the region 3. Thus, since a junction 6 for generating a capacity is a longitudinal part and the capacity is generated only in the junction 6, it becomes smaller.
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