发明名称 DEPOSITED FILM FORMING DEVICE BY PLASMA CVD METHOD
摘要 PURPOSE:To diffuse and release a gaseous raw material into a reaction vessel and to make film thickness and quality uniform by providing a space partitioned by two sheet of dielectric materials to the terminal part of an electromagnetic horn and forming many gas ejection holes to the dielectric material facing a substrate. CONSTITUTION:The space part partitioned of two sheets of the dielectric materials 106, 107 is formed at the terminal part of the electromagnetic horn connected to a waveguide 102 just before the reaction vessel 104. The many gas ejection holes 108 are provided to the dielectric material facing the substrate supporting surface of a substrate supporting means 105 so that the gaseous raw material introduced into the space is diffused and released into the reaction vessel 104. The intensity distribution of the electric field near the substrate surface is made uniform when the means 105 is rotated at the same instant. The gaseous raw material is thereby uniformly and efficiently excited to species and the film deposited on the surface of the substrate by a plasma CVD method is uniform and homogeneous.
申请公布号 JPS62142783(A) 申请公布日期 1987.06.26
申请号 JP19850283126 申请日期 1985.12.18
申请人 CANON INC 发明人 SHIRAI SHIGERU;KOBAYASHI MASAYA
分类号 C23C16/50;C23C16/511;G03G5/08 主分类号 C23C16/50
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