| 摘要 |
PURPOSE:To produce deposited films nearly free from defects in a high yield by regulating the partial pressure of steam in a vacuum vessel to a restricted value before the beginning of evacuation when a deposited film is formed on a substrate in the vessel by a vapor phase process. CONSTITUTION:A substrate 2 is placed in a vacuum vessel 7 and a gas having a low partial pressure of steam is introduced into the vessel 7 from the 2nd gas introducing system 12 through a steam removing means 13. After the partial pressure of steam in the vessel 7 is regulated to <=10mmHg, the vessel 7 is hermetically sealed to stop the introduction of the gas from the system 12 and the evacuation of the vessel 7 is started. A deposited film is then formed on the substrate 2 by a vapor phase process, preferably by plasma CVD.
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