发明名称 ION-IMPLANTING MAGNETIC BUBBLE ELEMENT
摘要 PURPOSE:To improve the transfer characteristic of a minute bubble by providing a laminated layer to an ion implanting layer forming a bubble transfer line by external force or onto a protection film, exerting uniform internal stress and applying distortion and applying stabilized heat processing of the ion implanting layer in this state. CONSTITUTION:The ion implanting layer 3 is formed on a bubble film 2 formed on a base 1 via a mask pattern and after the mask pattern is removed, a protection layer 4 is formed on the ion implanting layer 3 and a laminated film 5 is coated to apply the internal stress to the ion implanted layer 3. Then heat treatment for stabilizing the layer 3 in the state of the ion implanting transfer line is performed. Thus, an excellent bubble transfer margin is obtained without causing malfunction on the transfer line.
申请公布号 JPS62143285(A) 申请公布日期 1987.06.26
申请号 JP19850283062 申请日期 1985.12.18
申请人 HITACHI LTD 发明人 IMURA AKIRA;KOISO YOSHITSUGU;ASAI KENGO;ANDO KEIKICHI;IKEDA HITOSHI;SUZUKI MAKOTO
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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