| 摘要 |
PURPOSE:To improve the non-linearity of light detection output under a low illuminance, by arranging an insulation film having a large thickness on the outer periphery of an effective light-receiving region prior to formation of a semiconductor film for dividing a portion of the semiconductor film extended beyond the effective light-receiving region and over the insulation film. CONSTITUTION:An effective light-receiving region which actually contributes to linear light detection is provided by the region where a lower electrode 2, a semiconductor film 4 and an upper electrode electrode 5 overlap with each other. An insulation film 3 having a thickness larger than that of the semiconductor film 4 is provided on the outer periphery of this region prior to the formation of the semiconductor film 4. When the semiconductor layer 4 is formed, a portion thereof 4e extended beyond the effective light-receiving region and over the insulation film 3 is divided from the semiconductor film section 4Pd within the effective light-receiving region by utilizing the step produced by the difference in thickness between the semiconductor film 4 and the insulation film 3.
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