发明名称 ION IMPLANTATION CONTROL DEVICE
摘要 PURPOSE:To make an ion beam current characteristic securable automatically, by making a device so as to output an ion beam current characteristic graph on the basis of the ammeter measured value of a collected ion beam. CONSTITUTION:An ion implantation control device 1 is provided with a controlling device 3 giving an automatic control siganl to an ion implanter 2 and a data collecting device 4 collecting the ion beam ammeter measured value according to each ion beam accelerating voltage set by this controlling device 3. This device 4 is provided with a CRT display unit 5 or an outputting device outputting an ion beam current characteristic graph showing a relationship between the ion beam accelerating voltage and the ion beam ammeter measured value and a printer. And, an ion beam current characteristic is outputted to the CRT display unit 5 and the printer 6 after being graphed, while mass value, arc current value, filament current value, gas flow, etc., or conditional items holding sway over the ion beam current value are outputted. With this constitution, each ion beam ammeter measured value is stored in a memory of the data collecting device 4 in advance, and also the ion beam current characteristic can be displayed and outputted after sampling completion.
申请公布号 JPS62143356(A) 申请公布日期 1987.06.26
申请号 JP19850284605 申请日期 1985.12.17
申请人 NISSIN ELECTRIC CO LTD 发明人 SATO SHIGEO;NISHIMURA SOJI;TANIGAWA YOSHIHIKO
分类号 H01L21/265;H01J37/317 主分类号 H01L21/265
代理机构 代理人
主权项
地址