发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PURPOSE:To stabilize a write current by providing a depletion transistor (TR) whose gate and source are connected in a write circuit supplying a write current from a write DC power supply to a prescribed memory cell in response to write data. CONSTITUTION:A depletion TR 57 whose gate and source are connected in common is provided in a write circuit supplying a write current from a write DC power supply Vpp to a prescribed cell via a prescribed transfer gate TR. Thus, based on the constant current characteristic provided in the TR 57, the load characteristic of the write circuit (the load characteristic specified by TRs 56, 57 and a transfer gate TR (e.g., Tso) selected in this case) is formed as a flat characteristic within the range of drain-source voltage at data writing.</p>
申请公布号 JPS62143296(A) 申请公布日期 1987.06.26
申请号 JP19850282735 申请日期 1985.12.18
申请人 FUJITSU LTD 发明人 YOSHIDA MASANOBU
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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