| 摘要 |
PURPOSE:To enable a thickness of a semiconductor active layer to be monitored correctly, by forming a recess in the semiconductor active layer, applying light to the recess and measuring current between a source and a drain while using electrons excited by the application of light as a channel. CONSTITUTION:After an active layer 2 is grown on a substrate 1 and source and drain electrodes 3, 4 are formed, a photoresist film 5 is formed. The photoresist film 5 is provided with an aperture 5A having a pattern of a gate electrode. After required devices such as an ampere meter 6 and a power supply 7 are set properly, the surface of the layer 2 is etched through the aperture 5A to form a recess 2A. The current between the source and the drain is measured by means of the ampere meter 6. During this process, light is applied to the recess 2A in a constant quantity and at a constant wavelength.
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