| 摘要 |
PURPOSE:To form an electrode film on a semiconductor without adversely affecting the underlying semiconductor, by introducing the semiconductor body and a material of the electrode film to be formed in a vacuum container and applying laser beams to the electrode material for vapor depositing the same in a vacuum. CONSTITUTION:A transparent electrode 2 is formed on a glass substrate 1. Then, a p-type amorphous silicon layer 3a, an intrinsic amorphous silicon layer 3b and an n-type amorphous silicon layer 3c are formed thereon in that order. A semiconductor body 4 thus provided with the amorphous silicon layers is introduced in a vacuum container 11. After the container 11 is evacuated, a laser source 18 is energized so that laser beams are applied to a metallic mate rial 12. The metallic material 12 is thereby melted and evaporated. As a result, the material 12 is vapor deposited on the body 4. In this manner, an Al elec trode film 5 is vapor deposited in a vacuum on the layer 3c. |
