FORMATION OF DEPOSITED FILM

摘要

PURPOSE:To obtain a deposited film having uniform and high quality and to contrive economization of energy, increase of area simplification of control and mass production by bringing gaseous raw materials contg. In or Sn atoms, gaseous halogen oxidizing agent and oxygen-contg. gaseous compd. into chemical contact with each other in the space of a reaction chamber to form precursors. CONSTITUTION:A cylinder 101 or 102 in which the gaseous raw materials such as In(CH3)3 or Sn(CH3)4 contg. In or Sn for forming the deposited film is heated to form the gaseous materials. The gaseous halogen oxidizing agent which has the oxidation effect on such materials and is filled into a cylinder 106 and the oxygen-contg. gaseous compd. such as No filled in a cylinder 104 are introduced together with the above-mentioned gaseous raw materials through respective gas introducing pipes 109-111 into a vacuum chamber 120 where these materials are brought into contact with each other to chemically form the plural precursors including the precursors in the excited state. The deposited film is formed from >=1 precursors mentioned above as the supply source for the deposited film constituting element on a substrate 118 which exists in the film forming space of the chamber 120 and is held at an adequate temp.