| 摘要 |
PURPOSE:To prevent a crystalline layer in an element forming region from being etched in an anisotropical etching process by a method wherein before forming a V-shape groove, a protective film such as a silicon dioxide film is previously formed on a region forming a semiconductor elements. CONSTITUTION:A V-shape groove 6 reaching the inside of a substrate 1 is formed from a semiconductor crystalline layer 5 formed on the semiconductor substrate 1. After forming an insulator 32 (Si nitride film) in the groove 6, the insulator 23 is etched for flattening to element-isolate semiconductor elements formed on the crystalline layer 5. At this time, a surface protective film 21 is previously formed on the crystalline layer 5. Through these procedures, when the insulator 23 is etched, the surface of crystalline layer 5 in the element forming region can be prevented from making troubles such as being etched or damaged.
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