| 摘要 |
PURPOSE:To obtain an integrated type semiconductor laser device characterized by a single ridge property and an emitting beam having a narrow half-value width, by making the refractive index of a specified waveguide larger than that of a waveguide neighboring said waveguide, and flowing a current only through the specified waveguide. CONSTITUTION:A second waveguide 16 is formed by the second ridge, which is narrower than a first ridge 15. The effective refractive index of the waveguide 16 is smaller than that of the first waveguide 15. A P-type diffused region 19 is contacted with only the first waveguide 15 and not contacted with the second waveguide 16. When a positive voltage is applied to a P-side electrode 20 and a negative voltage is applied to an N-side electrode 21, a current flows only through the first waveguide 15. A current, which is going to flow through the second waveguide 16, is cut off. Therefore, in an active layer 13, a part directly beneath the first waveguide 15 becomes an active region. Light emission and amplification owing to stimulated emission occur and oscillation is generated. The emitting beam in the horizontal direction becomes a narrow single ridge beam.
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