| 摘要 |
PURPOSE:To omit a photoetching process for isolating back surface metal electrodes, by performing connection between elements with low resistance crystallized parts, which are yielded by laser annealing of an a-Si film, contacting the upper ends of the crystallized parts with a nonmetallic low resistance layer, thereby making it possible to perform the mask evaporation of the bask surface metal electrodes. CONSTITUTION:On an insulating transparent substrate 1 such as glass, a transparent conductor film such as tin oxide if deposited. After transparent electrodes 21 and 22 and the like undergo laser patterning, two layers of an a-Si film 30 and a transparent conductor film 20 are formed. Then, low power laser light is partially projected on the a-Si film 30 and annealing is performed. thus crystallized parts 51-53 and the like are formed. Said crystallized parts are made to be low resistance parts by the crystallization. Parts 6 on the transparent electrodes 21 and 22 and the like neighboring the crystallized parts are removed. The parts are divided into the a-Si films 31 and 32 and the like and transparent conductor films 26 and 27 and the like. Back surface metal electrodes 41 and 42 and the like are formed through an evaporating mask. Therefore, a photoetching process for the back surface metal electrodes, which has been performed in conventional procedure, can be omitted. Thus the manufacturing processes is simplified to a large extent. |
