| 摘要 |
PURPOSE:To form all electrodes on a flattened surface, by laminating a single crystal layer on a Schottky barrier diode part, and forming the electrodes on said layer. CONSTITUTION:A field insulating film 2 comprising an SiO2 film is provided in an n-type silicon region 1. An insulating mask 3 is provided on the film 2. A collector contact region and an SBD region are opened in the insulating mask 3. Then, an amorphous silicon film 20 is deposited. By utilizing solid phase epitaxial growing, the amorphous silicon film in the collector region and the SBD region, which are contacted with the silicon region 1, is converted into a single crystal layer 21. Arsenic ions are implanted, and an n-type layer is obtained. Then, the amorphous silicon other than the single crystal region and a base taking out electrode part is etched away. The insulating film 3 only at the inner base region is etched and a hole is provided. A base taking out electrode 4 is formed. Heat treatment is performed, and an outer region 5 is formed. The surface of the electrode 4 is oxidized, and an SiO2 film 6 is formed. An inner base region is opened as a window. Boron ions are implanted and heat treatment is performed. Thus an inner base region 7 is formed. |
