| 摘要 |
PURPOSE:To improve the operating speed of a field effect transistor, by forming a gate region with respect to drain and source diffused layers in a self-aligning mode, and using low resistance material for a gate electrode. CONSTITUTION:An isolating oxide film 2 is formed on a P-type silicon substrate 1 by using a selective oxidation method. With positive resist as a mask, dry etching is performed, and recess parts having a depth of about 0.4mum are formed in drain and source regions. Then the positive resist mask is removed, and polysilicon including phosphorus, which is N-type impurities, is deposited. After the surface is flattened with positive resist 10, the polysilicon 3 is made to remain only in the recess parts and the other part is removed. Then, oxidation is performed in an oxygen atmosphere. At this time, drain and source diffused layers 4 having a thickness of 0.2mum are formed around the polysilicon. An insulating oxide film 6 is formed on then polysilicon. A gate oxide film 5 is formed on the gate region of the silicon substrate between the polysilicon layers. Al is evaporated thereon. Etching is performed, and a gate electrode 7 is formed. Holes are formed in the insulating oxide film 6. A drain electrode 8 and a source electrode 9 reaching the polysilicon layer 3 are formed through the holes.
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