STRUKTURIERTER HALBLEITERKOERPER

摘要

1. Structured semiconductor body with several differently doped silicon crystal semiconductor regions and barrier regions which contact these laterally, are of polycrystalline silicon and which have been grown together on a semiconductor substrate by the method of the differential epitaxy, characterised thereby, that at least one connection to a monocrystalline semiconductor region (5) is constructed as a doped region (6'), which contacts this, in the polycrystalline silicon (7"), wherein this region displays a location (6") of maximum doping substance concentration, which lies laterally spaced from the transition between the monocrystalline and the polycrystalline region.