OPTICAL INTEGRATED CIRCUIT AND ITS PRODUCTION

摘要

PURPOSE:To eliminate the need for intricate optical alignment between semiconductors and dielectric materials by providing a dielectric crystal layer including optical waveguides and semiconductor epitaxial crystal layer including at least either of a light emitting region and light receiving region on a semiconductor substrate. CONSTITUTION:This optical integrated circuit consists of a thin LiNb2O3 film 9 and a semiconductor epitaxial layer consisting of InP/InGaAsP on the InP substrate 8. A Ti-diffused optical waveguide 11 is formed on the thin LiNb2O3 film 9 and a directional coupler having a control electrode 12 is formed particularly in an optical switch part 7. The semiconductor epitaxial layer forms a DFB type laser having a grating 13 in a light emitting part 6 and a P-N junction type photodiode in a light receiving part. The laser light oscillated in the light emitting part 6 is made incident on the Ti-diffused optical waveguide 11 at both ends and arrives at the light receiving part 5 on one side to make monitoring of the light output. Said light arrives at the optical switch part on the other end and after the optical path is changed over, the light is emitted from exit ends 14, 14'.