| 摘要 |
PURPOSE:To enable the perfect removal of foreign matters caused by a resist during a positive photoresist process and the resist on an edge part and the side wall of a wafer which is a cause of generation of particles by exposing the end part of a wafer while rotating the wafer. CONSTITUTION:After coating a wafer 2 with a photoresist (positive type) 8 by spin coating followed by baking at 80 deg.C, it is exposed by a wafer treatment device. The exposure is performed for 30sec at 1,000r.p.m, thereby exposing the edge part A of the wafer sufficiently. There is no problem if the quantity of exposure is several times the necessary quantity obtained by a sensitivity curve of the resist. Next, a mask alignment is done and development and rinsing are carried out to obtain a resist shape. Namely, the resist deposited on an edge part of a side wall of the wafer 2 is removed completely by the development.
|
