| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
A semiconductor memory device comprising a circuit which effects the flow of a discharge current to a selected word line, wherein a circuit for detecting change of a decoder input is provided, and thereby the discharge current flows temporarily only when the selected word line shifts to the non-selected condition. |
| 申请公布号 |
DE3176211(D1) |
申请公布日期 |
1987.06.25 |
| 申请号 |
DE19813176211 |
申请日期 |
1981.12.11 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
SUGO, YASUHISA;TOYODA, KAZUHIRO;YAMADA, KATUYUKI |
| 分类号 |
G11C11/41;G11C11/413;G11C11/414;G11C11/415;H01L27/10;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/41 |
| 代理机构 |
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代理人 |
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