| 摘要 |
PURPOSE:To facilitate formation and to simplify the structure of a thin film magnetic head and the like, by reducing the effect of the roughness of the surface of a basis on the characteristics of a thin film MR element. CONSTITUTION:Especially, a sputtering method, by which a target voltage and a target current are independently controlled, is used. In such a sputtering method, there are more controllable parameters in comparison with an ordinary RF two-pole sputtering method, and the optimum conditions are obtained. Since a substrate does not become an electrode, the element is not exposed to plasma. The element is less restricted by the configuration of a substrate holder. It is especially desirable to use a DC three-pole sputtering method. It is desirable to apply a magnetic field in the desired direction during the sputtering method is carried out. It is desirable that the direction of the magnetic field is perpendicular to the direction of the detected magnetic field of the MR element to be formed. When the magnetic field is applied, uniaxial anisotropy can be induced in the desired direction.
|
