发明名称 OPTICAL SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve optical sensitivity to a large extent, by providing the optimum reflection preventing film structure against near infrared rays. CONSTITUTION:In order to improve sensitivity for near infrared rays, the thicknesses of an oxide film and a nitride film 5 on the surface of a reverse conductivity type region 3 are controlled, and a reflection preventing film structure is provided. Meanwhile, the thicknesses of oxide films 6 and nitride films 7 on the surface of the same conductivity type region 2 are changed in order that the sensitivity peak does not appear at a part other than the reverse conductivity region 3. Thus a reflecting film structure is obtained. The reflection preventing film is formed by two layers of the oxide film 4(200Angstrom ) and the nitride film 5(850Angstrom ). As the reflecting films, the oxide films 6(4,000Angstrom ) and the nitride films 7(5,000Angstrom ) are formed on the upper surface of the reverse conductivity type region 2. These parts are formed of hour layers.
申请公布号 JPS62142375(A) 申请公布日期 1987.06.25
申请号 JP19850283614 申请日期 1985.12.17
申请人 MATSUSHITA ELECTRONICS CORP 发明人 MIYOSHI HAKOBU;YAMAGUCHI MASAYUKI
分类号 H01L31/10 主分类号 H01L31/10
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