发明名称 MOLECULAR BEAM EPITAXIAL GROWTH METHOD
摘要 PURPOSE:To make both mixed crystal with its rate changed and mixed crystal at a fixed rate of constitution grow with superior reproducibility, by using a plurality of molecular beam source cells which are different in their volume to accommodate molecular beam materials consisting of aluminum. CONSTITUTION:Molecular beam source cells 3a, 3b, and 3c are made to be cells of 16cc in crucible volume, molecular beam source cell 3s being a small- sized cell of 5cc or so in crucible volume, with heating capacity of a heater being the same or so. Al molecular beam sources are stored in the large-sized molecular beam source cell 3 and the small-sized molecular beam source cell 3s by the use of such a growth device, and heating fusion are performed. In case that crystal of fixed constitution is made to grow, Al is made to evaporate from the large-sized molecular beam source cell 3c. In case that crystal with is mixed crystal rate being changed is made to grow, Al is made to evaporate from the small-sized molecular beam source cell 3s to control the heating amount of the heater in the molecular beam source cell 3s. Thus, superior following property to a constitutional change improves reproducibility in growth of a mixed crystal layer.
申请公布号 JPS62141715(A) 申请公布日期 1987.06.25
申请号 JP19850281996 申请日期 1985.12.17
申请人 AGENCY OF IND SCIENCE & TECHNOL 发明人 OGASAWARA KAZUTO
分类号 H01L29/812;C30B23/08;H01L21/203;H01L21/26;H01L21/338;H01L29/778;H01L29/80 主分类号 H01L29/812
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