| 摘要 |
PURPOSE:To prevent the current concentration generated when a GTO thyristor is turned OFF by the shifing of a mask and the like in the process of manufacture by a method wherein the emitter layer part of the anode located at the position directly under a curvature part and the center part of a segment on the side of a cathode, is short-circuited using n-type impurities. CONSTITUTION:In an anode short-circuiting type GTO thyristor, which a p- emitter layer 2 whereon an anode will be formed, is short-circuited by n-type impurities, the emitter layer 2 located directly under a curvature part and the center part of a segment 1 on the side of a cathode is short-circuited by n-type impurities. For example, an anode short-circuiting part 3 consists of the part 3A located directly under the center part of a cathode segment 1 and the part 3B located directly under the curvature part 6 of the cathode segment 1. After an anode short-circuiting pattern has been formed on the oxide film attached p-emitter layer 2 of p-type n-p-n four-layer structure using a photolithographic technique, the oxide film on the part to be short-circuited of the anode short- circuiting part 3 is peeled off, and the titled thyristor is formed by diffusing n-type impurities on the above-mentioned part. |
